| 吴英伟,齐杏林,王洪岩,余春华.典型电容近炸引信存储性能退化分析[J].装备环境工程,2018,15(2):63-67. WU Ying-wei,QI Xing-lin,WANG Hong-yan,YU Chun-hua.Storage Performance Degradation of Typical Capacitance Proximity Fuse[J].Equipment Environmental Engineering,2018,15(2):63-67. |
| 典型电容近炸引信存储性能退化分析 |
| Storage Performance Degradation of Typical Capacitance Proximity Fuse |
| 投稿时间：2017-10-02 修订日期：2018-02-15 |
| DOI：10.7643/ issn.1672-9242.2018.02.012 |
| 中文关键词: 电容近炸引信 储存性能 退化分析 |
| 英文关键词:capacitance proximity fuse storage performance degradation analysis |
| 基金项目: |
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| Author | Institution |
| WU Ying-wei | 1.Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China; 2.Baicheng Ordnance Test Center of China, Baicheng 137001, China |
| QI Xing-lin | Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China |
| WANG Hong-yan | Shijiazhuang Campus, Army Engineering University, Shijiazhuang 050003, China |
| YU Chun-hua | Military Delegate Office of Beijing Military Delegate Bureau to Changzhi, PLA Army, Changzhi 046012, China |
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| 中文摘要: |
| 目的 分析退化或失效的原因及机理。方法 提出电容近炸引信储存性能试验，结合引信组成结构特点和出厂性能要求，对实际储存2~8年的引信开展储存性能检测试验，并对试验结果进行分析，进而确定性能退化敏感参数。结果 性能退化原因和机理分析表明，三极管、电阻、电路中导电胶粘结力、电感线圈等长储后性能退化影响引信性能。结论 确定了引信长储后检测时应重点关注定时器接电前输入电流、炸高和检波电压三项参数，并着重分析三极管、电阻、电路中导电胶和电感线圈等部位。 |
| 英文摘要: |
| Objective To analyze causes and mechanisms of degradation or failure. Methods The storage performance test method of capacitance proximity fuse was put forward. In combination with the requirements of the composition, structure and performance of fuse, storage performance of fuse stored for 2~8 years was tested. And the test results were analyzed to determine the sensitive parameters of the performance degradation. Results Performance degradation of the causes and mechanism analysis shown that the transistor, the resistance, the conductive adhesive force in the circuit, the inductance coil and other long storage performance degradation influenced the fuse performance. Conclusion After determination of test after long storage of fuse, it is important to pay attention to the three parameters of input current, explosion height and detection voltage, and focus on the analysis of the transistor, the resistance, the conductive glue and the inductance coil in the circuit. |
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