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| Interface between Multi-layered CVD SiC Coating and Its Graphite Substrate |
| Received:May 30, 2019 Revised:June 14, 2019 |
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| DOI：10.7643/issn.1672-9242.2019.10.010 |
| KeyWord:multi-layered SiC coating interface chemical vapor deposition graphite paper |
| Author | Institution |
| ZHU Yang |
School of Materials and Engineering, Northwestern Polytechnic University, Xi′an , China |
| ZHANG Yi |
Xi'an Aerospace Composites Research Institute, Xi′an , China |
| YAN Lian-sheng |
Xi'an Aerospace Composites Research Institute, Xi′an , China |
| CUI Hong |
School of Materials and Engineering, Northwestern Polytechnic University, Xi′an , China;Xi'an Aerospace Composites Research Institute, Xi′an , China |
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| Abstract: |
| Objective To successfully fabricate the multi-layered SiC coating, which was chemical vapor deposited (CVD) on the graphite paper, and characterize its interface structure and element distribution. Methods The flexible graphite paper was selected as the substrate. With methyltrichlorosilane (MTS) as the silicone source, H2 as the carrier gas and the reductant, and Ar as the diluent gas, the CVD process was conducted under a temperature range of 1030-1070 ℃ to make multi-layer SiC deposited on the graphite substrate by 5 individual cycles in a high-temperature vacuum induction furnace. The coating was characterized and analyzed with SEM and EDS separately, which included the outer surface and the cross section of the coating morphology, and the element distribution at the interface between the coating and the substrate. Results CVD process could efficiently manufacture the multi-layered SiC coating and the SiC grains had two hierarchy structures. Beside this, it was also identified by the EDS that there were different atom ratios of C and Si at different coating layers. Conclusion It was again approved that the deposited SiC and the graphite substrate have favorable chemical compatibility. The SiC coating has dense appearance by naked eyes and at nano-scale, but has lots of voids at micro-scale. A loose SiC boundary with 1-3 μm in width is formed between two CVD layers. The element distribution of Si and C at the coating side within 10μm range shows that its stoichiometric ratio is approaching to 1:1, which could be concluded as the transition layer of the SiC coating. |
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