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| Failure Analysis on Leakage Current Degradation of Heavy-ion-irradiated 1200 V Silicon Carbide Diodes |
| Received:August 05, 2019 Revised:August 28, 2019 |
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| DOI：10.7643/issn.1672-9242.2020.03.009 |
| KeyWord:SiC JBSD DLTS defects irradiation heavy ion leakage current degradation |
| Author | Institution |
| CAO Shuang |
China Academy of Space Technology, Beijing , China |
| YU Qing-kui |
China Academy of Space Technology, Beijing , China |
| ZHENG Xue-feng |
Xidian University, Xi′an , China |
| CHANG Xue-ting |
Xidian University, Xi′an , China |
| WANG He |
China Academy of Space Technology, Beijing , China |
| SUN Yi |
China Academy of Space Technology, Beijing , China |
| MEI Bo |
China Academy of Space Technology, Beijing , China |
| ZHANG Hong-wei |
China Academy of Space Technology, Beijing , China |
| TANG Min |
China Academy of Space Technology, Beijing , China |
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| Abstract: |
| The paper aims to study the influences of defects induced by heavy ion irradiation on leakage current degradation of 1200 V SiC diode. SiC Junction Barrier Schottky Diode (JBSD) was used as the sample. Germanium ion with energy of 208 MeV and LET=37.3 MeV.cm2/mg was used for irradiation test. The electrical properties of 1200 V SiC diodes before and after heavy ion irradiation were tested with a semiconductor device analyzer, and the defect analysis was carried out with a Deep Level Transient Spectrometer. After irradiation, the forward IV and CV characteristics of the diode did not change significantly, and the reverse IV characteristics were degraded. DLTS results showed that the E0.4 energy level and Z1/Z2 energy level were basically unchanged, and the EH energy level was broadened. The concentration of EH energy level measured under the test voltage VM=-8 V and filling pulse voltage VF=-1 V was higher than that measured under VF=-4 V. It is concluded that the defects of EH energy level are complex, presumably the combination of two or more defect energy levels (EH4, EH5, EH6, EH7, etc.). The complexity of defects is positively correlated with the degradation of leakage current, and the locations of these defects are close to the surface of SiC epitaxial layer. |
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