Deposition Kinetics of SiC Interfacial Coatings Prepared by Chemical Vapor Infiltration
Received:January 12, 2021  Revised:April 14, 2021
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DOI:10.7643/issn.1672-9242.2021.06.004
KeyWord:chemical vapor infiltration  SiC interfacial coatings  thermodynamic calculation  deposition temperature  deposition kinetics
                    
AuthorInstitution
DAI Jian-wei Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
HE Li-min Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
SHEN Zao-yu Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
LIU Guan-xi Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
ZHEN Zhen Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
XU Zhen-hua Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
MU Ren-de Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China
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Abstract:
      This paper aims to study the influence of deposition temperature on the morphology, structure and composition of SiC interfacial coatings and to discuss the deposition kinetics and mechanism of it. Factsage software was used to calculate the product composition of MTS-H2 system after thermodynamic equilibrium. SiC interfacial coatings were prepared on SiC fibers by chemical vapor infiltration (CVI). The morphology, structure and composition of the coatings were analyzed by SEM, TEM and XRD. The main products were SiC and C of MTS-H2 system after thermodynamic equilibrium in the temperature range of 860~1060 ℃. In this temperature range, SiC interfacial coatings were prepared by CVI. In the temperature range of 860~ 1060 ℃, the increase of deposition temperature can improve the yield of SiC. When the temperature is lower than 960 ℃, the surface of SiC interfacial coating is smooth; when the temperature is higher than 1060 ℃, clusters appear on the surface of the coatings. With the increase of deposition temperature, the crystallinity of the coating increases. The deposition kinetics results showed that the deposition process of SiC coatings was controlled by surface reaction when the temperature was lower than 1060 ℃ and controlled by diffusion when it was higher than 1060 ℃. The SiC interfacial coatings with single cubic phase were prepared by CVI and (111) crystal plane was the preferred growth crystal plane of SiC particles.
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