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Deposition Kinetics of SiC Interfacial Coatings Prepared by Chemical Vapor Infiltration |
Received:January 12, 2021 Revised:April 14, 2021 |
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DOI:10.7643/issn.1672-9242.2021.06.004 |
KeyWord:chemical vapor infiltration SiC interfacial coatings thermodynamic calculation deposition temperature deposition kinetics |
Author | Institution |
DAI Jian-wei |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
HE Li-min |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
SHEN Zao-yu |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
LIU Guan-xi |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
ZHEN Zhen |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
XU Zhen-hua |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
MU Ren-de |
Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing Institute of Aeronautical Materials, Beijing , China |
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Abstract: |
This paper aims to study the influence of deposition temperature on the morphology, structure and composition of SiC interfacial coatings and to discuss the deposition kinetics and mechanism of it. Factsage software was used to calculate the product composition of MTS-H2 system after thermodynamic equilibrium. SiC interfacial coatings were prepared on SiC fibers by chemical vapor infiltration (CVI). The morphology, structure and composition of the coatings were analyzed by SEM, TEM and XRD. The main products were SiC and C of MTS-H2 system after thermodynamic equilibrium in the temperature range of 860~1060 ℃. In this temperature range, SiC interfacial coatings were prepared by CVI. In the temperature range of 860~ 1060 ℃, the increase of deposition temperature can improve the yield of SiC. When the temperature is lower than 960 ℃, the surface of SiC interfacial coating is smooth; when the temperature is higher than 1060 ℃, clusters appear on the surface of the coatings. With the increase of deposition temperature, the crystallinity of the coating increases. The deposition kinetics results showed that the deposition process of SiC coatings was controlled by surface reaction when the temperature was lower than 1060 ℃ and controlled by diffusion when it was higher than 1060 ℃. The SiC interfacial coatings with single cubic phase were prepared by CVI and (111) crystal plane was the preferred growth crystal plane of SiC particles. |
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